PART |
Description |
Maker |
1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode 100 V, 500 mA, gold bonded germanium diode 12 V, 500 mA, gold bonded germanium diode 90 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION) 75 V, 500 mA, gold bonded germanium diode 120 V, 500 mA, gold bonded germanium diode 70 V, 500 mA, gold bonded germanium diode 80 V, 500 mA, gold bonded germanium diode 115 V, 500 mA, gold bonded germanium diode 60 V, 500 mA, gold bonded germanium diode
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BKC International Electronics ETC[ETC]
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1N2609 1N2617 1N2614 1N2615 1N2616 |
GOLD BONDED GERMANIUM DIODES
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New Jersey Semiconductor
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AA119 |
GOLD BONDED GERMANIUM DIODE
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List of Unclassifed Man...
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AA135 |
GOLD BONDED GERMANIUM DIODE
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BKC
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AA139 |
GOLD BONDED GERMANIUM DIODE
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ETC[ETC]
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1N268 |
Gold Bonded Germanium Diodes in DO-7 Package
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New Jersey Semi-Conductor Products, Inc.
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CLY32-00 CLY32-05 CLY32-10 CLY32 |
Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes 伊雷尔C波段砷化镓功率场效应 HiRel C-Band GaAs Power-MESFET
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INFINEON[Infineon Technologies AG]
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1N965 JANTX1N957B-1 1N960 1N985 1N963 1N967 JANTXV |
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 24 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 10 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 20 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 10 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 56 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 27 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 12 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 MVSTBW 2,5/21-ST 12 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA Zener Voltage Regulator Diode RES 348-OHM 0.1% 0.125W 25PPM THIN-FILM SMD-1206 TR-7-PA METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION
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MICROSEMI CORP-LAWRENCE Microsemi, Corp. MICROSEMI[Microsemi Corporation] http://
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1N74 1N60D 1N68A 1N96A 1N72 1N73 1N93 1N63 1N61 1N |
Diode Switching 100V 10A 2-Pin Diode Switching 50V 3A 2-Pin Case A GOLD BOUNDED GERMANUM DIODE Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R Diode Switching 125V 0.0003A 2-Pin DO-35 Diode Switching 50V 0.005A 2-Pin Case H GOLD BONDED GERMANIUM DIODES
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New Jersey Semiconductor
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Q62705-K151 KPY33-R |
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105 相对硅压阻压力传感器 Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes Silicon Piezoresistive Relative Pressure Sensor Silicon Piezoresistive Relative Press...
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Siemens Semiconductor G... SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
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